LOAD LOCK Chamber (option)
LOAD LOCK預(yù)真空進(jìn)樣室(可選)
Chamber with front open door
前開(kāi)門蒸發(fā)腔體
Cryopump and dry pump
冷凝泵和干泵
Multiple thermal evaporation sources or OLED sources
多個(gè)熱阻蒸發(fā)源或OLED低溫蒸發(fā)源
Max. 6” substrate
6”基片
Substrate rotation
基片旋轉(zhuǎn)
Substrate bias (option)
基片偏壓(可選)
Ion source for substrate cleaning (option)
離子源清洗基片(可選)
Substrate heating to 1000C (option)
基片加熱1000度(可選)
Crystal rate monitor and film thickness control
晶振沉積速率及膜厚控制
Manual or automatic system control
系統(tǒng)手動(dòng)或自動(dòng)控制
For deposition of l, semiconductor and insulation materials
可沉積金屬、半導(dǎo)體和絕緣材料
For deposition of multi- or alloy film
可沉積多層膜及合金薄膜
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LOAD LOCK Chamber (option)
LOAD LOCK預(yù)真空進(jìn)樣室(可選)
Chamber with front open door
前開(kāi)門蒸發(fā)腔體
Cryopump and dry pump
冷凝泵和干泵
Multiple thermal evaporation sources or OLED sources
多個(gè)熱阻蒸發(fā)源或OLED低溫蒸發(fā)源
Max. 6” substrate
6”基片
Substrate rotation
基片旋轉(zhuǎn)
Substrate bias (option)
基片偏壓(可選)
Ion source for substrate cleaning (option)
離子源清洗基片(可選)
Substrate heating to 1000C (option)
基片加熱1000度(可選)
Crystal rate monitor and film thickness control
晶振沉積速率及膜厚控制
Manual or automatic system control
系統(tǒng)手動(dòng)或自動(dòng)控制
For deposition ofl, semiconductor and insulation materials
可沉積金屬、半導(dǎo)體和絕緣材料
For deposition of multi- or alloy film
可沉積多層膜及合金薄膜